EPM 87. Energy Pulse and Particle Beam Modification of Materials: International Conference held September 7—11, 1987 Dresden, G.D.R.

Published by De Gruyter 1988

EPM 87. Energy Pulse and Particle Beam Modification of Materials

International Conference held September 7—11, 1987 Dresden, G.D.R.

Compiled by: Klaus Hennig

Volume 8 in the series Physical Research

https://doi.org/10.1515/9783112611203

Contents

Frontmatter Publicly Available Download PDF	1
CONTENTS Publicly Available Download PDF	7
1. Invited papers
EPM'87 - STATE OF THE ART K Hennig Requires Authentication Unlicensed Licensed Download PDF	17
ACCELERATION OF MICROPARTICLES Martin Setvak Requires Authentication Unlicensed Licensed Download PDF	24
STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS I.B Khaibullin and V.Yu Petukhov Requires Authentication Unlicensed Licensed Download PDF	29
MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS I Ursu, I.N Mihailescu, A.M. Prokhorov and V.L. Konov Requires Authentication Unlicensed Licensed Download PDF	39
IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON A.V. Dvurechenskii, R. Grötzschel and V.P. Popov Requires Authentication Unlicensed Licensed Download PDF	44
DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND Jan Kaozmarek and Witold Rosiaskl Requires Authentication Unlicensed Licensed Download PDF	50
COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION B Rauschenbach Requires Authentication Unlicensed Licensed Download PDF	56
MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION W. Pompe, G. Keßler, M. Klose, H.J Scheibe, S. Becker, H.J. Dietze and G. Seifert Requires Authentication Unlicensed Licensed Download PDF	62
FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION K.-H. Heinig and H.-J. Mueller Requires Authentication Unlicensed Licensed Download PDF	69
PULSED ION IMPLANTATION OF SILICON WITH SELENIUM G. Serfozo, R Naujokaitis, I. Krafcsik, L. Dozca, G. Battistig, P. Ridl, E. Klopfer, N. N. Gerasimenko and J. Gyulai Requires Authentication Unlicensed Licensed Download PDF	74
RAPID THERMAL PROCESSING FOR VLSI APPLICATION E. Wieser, D Gerisch and V. Kahlert Requires Authentication Unlicensed Licensed Download PDF	80
SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS P.L.F. Hemment and K.J. Reeson Requires Authentication Unlicensed Licensed Download PDF	87
EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS A. Turos Requires Authentication Unlicensed Licensed Download PDF	99
THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION Masaya Iwaki Requires Authentication Unlicensed Licensed Download PDF	104
MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN G. Marest, S. Faveiule, W Mowcoffre and J. Tousset Requires Authentication Unlicensed Licensed Download PDF	110
ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS V.P Ageev, V.I Konov, A.I. Maslakov, V. M. Jlel’nikov and L.V Vellkov Requires Authentication Unlicensed Licensed Download PDF	116
APPLICATIONS OF MICROFOCUSSED ION BEAMS F.G. Rüdenauer Requires Authentication Unlicensed Licensed Download PDF	124
STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT F Fujimoto and M. Satou Requires Authentication Unlicensed Licensed Download PDF	131
MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS S.V. Gaponov and M.D. Strikovsky Requires Authentication Unlicensed Licensed Download PDF	140
2. Implantation into silicon
RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON M. Posselt and W. Skorupa Requires Authentication Unlicensed Licensed Download PDF	146
DEFECT FLUX EFFECTS DURING ION IMPLANTATION K Holldack and H. Kerkow Requires Authentication Unlicensed Licensed Download PDF	149
IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT K Holldack and H Kerkow Requires Authentication Unlicensed Licensed Download PDF	152
6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON J. K. N. Lindner and E. te Kaat Requires Authentication Unlicensed Licensed Download PDF	155
ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS M. Voelskow, W. Skorupa and J. Matthsi Requires Authentication Unlicensed Licensed Download PDF	158
HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON W. Skorupa, E. Wieser, R. Grötzschel, M. Posselt, A. Armigliato, A. Garulli, A. Bèyer and W Markgraf Requires Authentication Unlicensed Licensed Download PDF	161
DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES N. Hecking and E. te Kaat Requires Authentication Unlicensed Licensed Download PDF	164
JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING J. Langner, K. Czaus, E Gdrski, M. Gryziriski, A. Horodefiski, J. Pibkoszswski, C. Pochrybniak, Z Warner and M. Wojtowicz Requires Authentication Unlicensed Licensed Download PDF	167
A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION B. Schmidt, U. Kreißig, H Münzer and E. Rost Requires Authentication Unlicensed Licensed Download PDF	170
EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON R.F Konopleva, I.V. Nazarkin, V.A Evaeev, B.A Borisov and V.A Chekanov Requires Authentication Unlicensed Licensed Download PDF	173
3. Implantation and annealing of compound semiconductor
RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER T. Bachmann, J. Kleemann, W. Wesch and G. Götz Requires Authentication Unlicensed Licensed Download PDF	177
SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs D Panknin, C.E Richter, M Gericke and Ya.V. Fattachov Requires Authentication Unlicensed Licensed Download PDF	181
INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS J Herold, W Wesch, G. Götz and H. Bartsch Requires Authentication Unlicensed Licensed Download PDF	184
INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs A Jordanov, W Wesch and K Gartner Requires Authentication Unlicensed Licensed Download PDF	187
Short time threshold for electrical activation of implanted and annealed GaAs D. Panknin, E. Wieser, Ya.V. Fattachov and I.B Khaibullin Requires Authentication Unlicensed Licensed Download PDF	190
ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS J. Grno Requires Authentication Unlicensed Licensed Download PDF	193
FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE J Krynicki, A. Kozanecki, A. Olszewski and R. Grötzschel Requires Authentication Unlicensed Licensed Download PDF	196
RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT D. Baither, H. Bartsch and D. Panknin Requires Authentication Unlicensed Licensed Download PDF	200
HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs P. Thiele Requires Authentication Unlicensed Licensed Download PDF	204
4. Implantation into metals
FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS V. Heera and B. Rauschenbach Requires Authentication Unlicensed Licensed Download PDF	207
STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS S.P Bugaev, Yu.R Kolobov, A.D Korotaev and A.O Savchenko Requires Authentication Unlicensed Licensed Download PDF	210
STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL J Jagielski, G. Gawlik, A. Podgorski and W. Zielinski Requires Authentication Unlicensed Licensed Download PDF	213
WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS G. Gawlik, J. Jagielski and A. Podgorski Requires Authentication Unlicensed Licensed Download PDF	216
TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS Jun Sasaki and Masaya Iwaki Requires Authentication Unlicensed Licensed Download PDF	219
MICROSTRUCTURE OF TI-IMPLANTED FE Y. Fukui, Y. Hirose and M. Iwaki Requires Authentication Unlicensed Licensed Download PDF	222
DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL V.P. Goltsev, V.V Khodasevich, V.V Uglov, G. Götz, K. Berndt and V. Bayer Requires Authentication Unlicensed Licensed Download PDF	225
INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON B Rauschenbach and G. Leonhardt Requires Authentication Unlicensed Licensed Download PDF	228
CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS H. Reuther, E. Richter, M. Fujinami and Y. Ujihira Requires Authentication Unlicensed Licensed Download PDF	231
WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS Gerhard Dienel, Andreas Kolitsch, Edgar Richter and Uwe Scholz Requires Authentication Unlicensed Licensed Download PDF	234
HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS Roland Kuohler and Edgar Riohter Requires Authentication Unlicensed Licensed Download PDF	237
COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS A Unkroth, G Götz, U Heiber and W. Andrä Requires Authentication Unlicensed Licensed Download PDF	240
AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS G. Linker, A Seidel and B. Strehlau Requires Authentication Unlicensed Licensed Download PDF	244
Implantation effects on microcrack initation in fatigued metals C. Blochwitz and B. Rauschenbach Requires Authentication Unlicensed Licensed Download PDF	247
STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P⁺ IONS L.C Nistor, V Tedorescu, G. Dinca and R. Medianu Requires Authentication Unlicensed Licensed Download PDF	250
5. Transient heat treatment of semiconductors
ANNEALING OF LASER INDUCED DEFECTS IN SILICON W Andra, I. Brylowska and G Gotz Requires Authentication Unlicensed Licensed Download PDF	253
ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON V.P Popov, S.S. Shaimeev, A.V Dvurechenski and L.V. Sovronov Requires Authentication Unlicensed Licensed Download PDF	256
ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS Ya.V Fattachov, R.M Bayazitov, I.B Khaibullin, E.M Misyuryov and M.A. Mchitarov Requires Authentication Unlicensed Licensed Download PDF	259
CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON V.S Budishevsky, R. Grotzschel, V.A Kagadey, N.I. Lebedeva, D.I. Proskurovsky and E.B. Yankelevich Requires Authentication Unlicensed Licensed Download PDF	262
IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM) D Hoehl Requires Authentication Unlicensed Licensed Download PDF	265
Laser beam induced microdefects in silicon detected by SEM and TEM H. Johansen, H. Bartsch and B. Lammel Requires Authentication Unlicensed Licensed Download PDF	268
RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON J. Hlavka, J. Grno, J Dragula and M. Libesny Requires Authentication Unlicensed Licensed Download PDF	271
THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA R Koegler and E. Wieser Requires Authentication Unlicensed Licensed Download PDF	274
INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES N Sieber and D Proskurovsky Requires Authentication Unlicensed Licensed Download PDF	278
ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING R. Kogler, E. Wieser, A. Armigliato, E. Landi and S Solmi Requires Authentication Unlicensed Licensed Download PDF	281
NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING V.A Samujlov and V.F Stelmakh Requires Authentication Unlicensed Licensed Download PDF	285
TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON V.F Stelmateh, Tu.R Suprun-Belevich and A.R. Chelyadinskii Requires Authentication Unlicensed Licensed Download PDF	288
COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON N.I. Berezhov, A.R Chelyadinskii, Yu.R. Suprun-Belevich, N.L. Prokhorenko, A.K. Polonin and N.T. Kvasov Requires Authentication Unlicensed Licensed Download PDF	291
INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING N. L. Prokhorenko and Tu. R Suprtm-Belevich Requires Authentication Unlicensed Licensed Download PDF	294
THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS P. P. Partta Requires Authentication Unlicensed Licensed Download PDF	297
ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING B Canut, J. Pivot, D. Barbier, G. Chaussemy and J-F. Joly Requires Authentication Unlicensed Licensed Download PDF	300
ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION J Felba, K Friedel and K Przybecki Requires Authentication Unlicensed Licensed Download PDF	303
NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS V.P Popov, A.V Dvurechenskii and Yu.A Manjosov Requires Authentication Unlicensed Licensed Download PDF	306
THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING V.A. Pilipovich, E.I. Gatskevich and V.L. Malevich Requires Authentication Unlicensed Licensed Download PDF	309
MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON Z Werner, J. Piekoszbwski, C. Pochrybniak, Z. Haratym and A Sulik Requires Authentication Unlicensed Licensed Download PDF	312
PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION J. Piekoszewski, Z. Ulbrner, C. Pochrybniak, J. Langnar and A. Horoderiski Requires Authentication Unlicensed Licensed Download PDF	315
EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA D. Baither, R. Koegler and E. Wieeer Requires Authentication Unlicensed Licensed Download PDF	318
ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING F. Gaiseanu, M Bazu and L Galateanu Requires Authentication Unlicensed Licensed Download PDF	321
RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS J-M Dilhac and A. Martinez Requires Authentication Unlicensed Licensed Download PDF	324
6. Formation of silicides
THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi₂ LAYERS Geza Valyi, Christine Dehrn, Heiner Ryssel and Wolfhard Möller Requires Authentication Unlicensed Licensed Download PDF	327
LIQUID PHASE GROWTH OF FeSi₂ I Kasko, K. Gartner and G Gotz Requires Authentication Unlicensed Licensed Download PDF	335
LIQUID PHASE GROWTH OF NiSi₂ AND CoSi₂ A Witzmann, C. Kaschner, K. Gärtner and G Götz Requires Authentication Unlicensed Licensed Download PDF	338
FORMATION OP EPITAXIAL NiSi₂ LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING V.Yu Petukhov, I.B. Khaibullin, M.M Zaripov, E. Wieser and R Groetzschel Requires Authentication Unlicensed Licensed Download PDF	341
REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi₂/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING E Wieser, Ch Weise, E. Vetter and Th Gessner Requires Authentication Unlicensed Licensed Download PDF	344
R.B.S. STUDIES OF WSi₂ FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN B. Canut, M Cadri, J Pivot and A. Deneuville Requires Authentication Unlicensed Licensed Download PDF	347
ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr₊ IONS AFTER LASER ANNEALING V.Yu. Petukhov, I.B. Khaibullin, N.V. Kurbatova, E. Wieser and R. Grötzschel Requires Authentication Unlicensed Licensed Download PDF	350
CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES E D’Anna, G Leggieri, A. Luches and M Martino Requires Authentication Unlicensed Licensed Download PDF	354
7. Ion beam assisted deposition and ion beam mixing
COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON I. R Chakarov and D. S. Karpuzov Requires Authentication Unlicensed Licensed Download PDF	357
I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING Zs. J. Horvcith, B. Pecz and E Jaroli Requires Authentication Unlicensed Licensed Download PDF	360
ION MIXING IN GLASSES A.A Deshkovskaya, V.P. Komar, J.V Skornyakov, G.P. Pimenova and V. J. Ovchinnikov Requires Authentication Unlicensed Licensed Download PDF	363
ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD Kiyoshi Ogata, Yasunori Andoh and Eiji Karaijo Requires Authentication Unlicensed Licensed Download PDF	366
ION MIXING IN Cu/Au MULTILAYERED THIN FILMS K Hohmuth, R. Grotzschel and B Rauschenbach Requires Authentication Unlicensed Licensed Download PDF	369
A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED Z.A. Iskanderova, T.D Radjabov, R.Yu. Leiderman and F.K Tukfatullin Requires Authentication Unlicensed Licensed Download PDF	372
INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD W. Pompe, M. Bobeth and Yu.V Trushin Requires Authentication Unlicensed Licensed Download PDF	375
MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING E. Hensel, R. Grotzschel, U. Scholz and E. Richter Requires Authentication Unlicensed Licensed Download PDF	378
Computer simulation and and experimental measurements of recoil implantation of gold into silicon K. Paprocki, J. Brylowska, W. Szyszko, P Jaworska and M. Subotowicz Requires Authentication Unlicensed Licensed Download PDF	381
8. Deposition, modification and structurization
ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS E Venkova, K. Kostov, S. Georgieva and I. Katardjiev Requires Authentication Unlicensed Licensed Download PDF	384
STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr⁺- AND Fe⁺-IONS V.Yu Petukhov, I.Z. Ilaldinov, I.B Khaibullin and K. Wollschlager Requires Authentication Unlicensed Licensed Download PDF	387
ION BOMBARDMENT INDUCED MODIFICATION OF La₆ G. Oertel and W. Henrion Requires Authentication Unlicensed Licensed Download PDF	390
Pyrolitic laser deposition of tungsten T. Szorenyi, K. Piglmayer and D. Bauerle Requires Authentication Unlicensed Licensed Download PDF	393
PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS K. Bali, T Szorenyi and I Hevesi Requires Authentication Unlicensed Licensed Download PDF	396
MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES B.A Budkevich, I.A Ges, S.P Zhvavyj, G.D Ivlev, V.A Pilipovich and I.M Romanov Requires Authentication Unlicensed Licensed Download PDF	399
HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION B. Schultrich, H.-J. Scheibe, G. Kebler, M Ermrich, H Muller and W. Hauffe Requires Authentication Unlicensed Licensed Download PDF	402
TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS A. Richter Requires Authentication Unlicensed Licensed Download PDF	405
THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION S Veilmar, Th. Schlegel, W Pompe and W Brunner Requires Authentication Unlicensed Licensed Download PDF	408
EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV R. Wünsch, H.-J Scheibe, H.J Weiß and W. Resch Requires Authentication Unlicensed Licensed Download PDF	411
CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY W. Ross, H. Beyer and S. Völlmar Requires Authentication Unlicensed Licensed Download PDF	414
ON DEFECTS AND STRESSES IN THIN FILMS A. Richter, A.E Romanov, W Pompe and V.l. Vladimirov Requires Authentication Unlicensed Licensed Download PDF	417
ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD T Izumi, M. Shibuyta, T. Hirao, T Kamada and T. Matsumori Requires Authentication Unlicensed Licensed Download PDF	420
9. Silicon on insulator (SOI)
ELECTRICAL PROPERTIES OF SILICON FILMS ON Si0₂ FORMED BY EXPLOSIVE CRYSTALLIZATION N. Winkler, W Andrä, E. Glaser and G. Andrä Requires Authentication Unlicensed Licensed Download PDF	423
FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS W. Skorupa, K. Wollschlager, M Voelskow, H. Bartsch, O. Albrecht and J. Gotz Requires Authentication Unlicensed Licensed Download PDF	427
MODELING OF ¹⁸O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION H.U Jäger, J.A. Kilner, R.J. Chater, P.L.F. Hemment, R.F. Peart and K.J. Reeson Requires Authentication Unlicensed Licensed Download PDF	430
IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON H. U. Jäger Requires Authentication Unlicensed Licensed Download PDF	433
THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY H.-J. Muller and K.-H. Heinig Requires Authentication Unlicensed Licensed Download PDF	436
MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE N. Sieber and G. Otto Requires Authentication Unlicensed Licensed Download PDF	439
INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO₂ H.H. Richter, B. Tillack, R. Banisch, H. Andrä and W. Weinelt Requires Authentication Unlicensed Licensed Download PDF	443
ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS R Banisch, B Tillack, B. Hunger, P. Barna, J. Gyulai, M. Adam and V. Schiller Requires Authentication Unlicensed Licensed Download PDF	446
A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON E. Sobeslavsky, H. U. Jager, W Skorupa and K. Wollschlager Requires Authentication Unlicensed Licensed Download PDF	450
PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S S. Wagner, F Neubert, Th Ottoj, U. Kreifiig and J. Schoneich Requires Authentication Unlicensed Licensed Download PDF	453
PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON M Wagner, G Andrä, E. Glaser, G Götz and H. Bartsch Requires Authentication Unlicensed Licensed Download PDF	457
COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION K.-H. Heinig and H.-J. Mueller Requires Authentication Unlicensed Licensed Download PDF	460
STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING K.-H. Heinig and H.-J. Mueller Requires Authentication Unlicensed Licensed Download PDF	464
High Throughput CO₂ laser Recrystallization for 3D integrated Devices K. Haberger, P. Panish, R Buchner, H Steinberger and R. Bower Requires Authentication Unlicensed Licensed Download PDF	468
FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi₂ BY ION IMPLANTATION J Danilowitsch, K. Gärtner, G Gotz and B. Weber Requires Authentication Unlicensed Licensed Download PDF	471
10. Diagnostics and ion microfocus beam
EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS F. Machalett, R. Mühle and J. Stiebritz Requires Authentication Unlicensed Licensed Download PDF	474
CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS R Mühle, F. Machalett and J. Stiebritz Requires Authentication Unlicensed Licensed Download PDF	477
CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION J Bollmann, A Mertens and H. Klose Requires Authentication Unlicensed Licensed Download PDF	479
POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS S. Unterricker Requires Authentication Unlicensed Licensed Download PDF	482
QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO₂/Si-STRUCTURES H. U. Marquardt, U. Gunst and B. Muller Requires Authentication Unlicensed Licensed Download PDF	485
HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES K. Kiszczak, A. Latuszyriski, D. Mgczka and A. Podgörski Requires Authentication Unlicensed Licensed Download PDF	489
A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY S. Bederka, I. Bello, V Dubravcova, J. Grno, R. Harmann, J. Janik, V. Kral, V. Kremnican, J Mraz, A. Ritomsky, J. Durcansky, I. Grellneth and V. Illich Requires Authentication Unlicensed Licensed Download PDF	492
THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS I.A Glushtsov, V.I Korzjuk, Y.A Podlipko and A.I Urbanovitch Requires Authentication Unlicensed Licensed Download PDF	495
MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE U Kreibig, A. Kahn, F.G Rüdenauer and W. Steiger Requires Authentication Unlicensed Licensed Download PDF	498
CLUSTER IONS IN LASER MASS SPECTRA OF WO₃/C TARGETS H.-O. Dietze, S. Becker and W. Pompe Requires Authentication Unlicensed Licensed Download PDF	501
ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF ⁴⁺CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING A. Schindler, R. Fechner, R. Flagmeyer, D. Panknin, F Bigl and G. Otto Requires Authentication Unlicensed Licensed Download PDF	503
A MaV ION PROBE AT TU PRAGUE M Setvak, Z Hulek, O Voltr, Z Haba, R Salomonovic, A Sibl and O Krai Requires Authentication Unlicensed Licensed Download PDF	506
11. Fundamentals
COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES M. Posselt and G. Otto Requires Authentication Unlicensed Licensed Download PDF	508
MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION A. Schonborn, N. Hecking and E. te Kaat Requires Authentication Unlicensed Licensed Download PDF	511
ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION Andrzej Dygo and Andrzej Turos Requires Authentication Unlicensed Licensed Download PDF	514
TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY W Szyszko, K. Paprocki and J. Sielank Requires Authentication Unlicensed Licensed Download PDF	517
MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON D Stock and H.-D. Geiler Requires Authentication Unlicensed Licensed Download PDF	521
INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING V.Yu Balandin, A.V. Dvurechenskii and L.N Aleksandrov Requires Authentication Unlicensed Licensed Download PDF	524
INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING H. Bartsch, D Hoehl and P. Werner Requires Authentication Unlicensed Licensed Download PDF	527
NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE M. Rabirtski Requires Authentication Unlicensed Licensed Download PDF	530
SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT S.P. Zhvavyi and O.L. Sadovskaja Requires Authentication Unlicensed Licensed Download PDF	533
PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON G.D. Ivlev and V.V. Zhidkov Requires Authentication Unlicensed Licensed Download PDF	536
THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES D. Wolff and H.D. Geiler Requires Authentication Unlicensed Licensed Download PDF	539
MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON H . - D Geiler and G. Götz Requires Authentication Unlicensed Licensed Download PDF	542
LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY O. Bostanjoglo, R. P. Tornow and W. Tornow Requires Authentication Unlicensed Licensed Download PDF	545
THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT V .Yu Balandin, A .V Dvurechensk and L .N Aleksaridrov Requires Authentication Unlicensed Licensed Download PDF	548
AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS O .A Kuljasova, V .Yu Balandin, A .V Dvurechensk and L .N Aleksandrov Requires Authentication Unlicensed Licensed Download PDF	551
12. Miscellaneous
LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM M. Kalitzova, N. Pashov, D Karpuzov, P Werner, H. Bartsch and G Vitali Requires Authentication Unlicensed Licensed Download PDF	554
ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES G. Mende, M. Deutscher, H.J. Doring, H Flietner and B Scfimidt Requires Authentication Unlicensed Licensed Download PDF	557
SELF-ORGANIZATION PHENOMENA DURING CHARGE TRANSPORT IN BORON DOPED POLYORYSTALLINE SILICON V.A. Dorosinetz, N.A Poklonski, V.A Samujlov and V.F Stelmakh Requires Authentication Unlicensed Licensed Download PDF	560
LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS A.M. Zaitsev, V.S Varichenko, A.A. Melnikov and V.F. Steimakh Requires Authentication Unlicensed Licensed Download PDF	563
LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS V.S Varichenko, A.M Zaitsev, A.A. Melnikov and V.F. Stelmach Requires Authentication Unlicensed Licensed Download PDF	566
MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS Rainer Behrisch Requires Authentication Unlicensed Licensed Download PDF	569
STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS H.E. Schaefer, R. Wurschum, R Birringer and H Gleiter Requires Authentication Unlicensed Licensed Download PDF	580
13. Author Index Requires Authentication Unlicensed Licensed Download PDF	592
Backmatter Requires Authentication Unlicensed Licensed Download PDF	595

Language: English
Publisher: De Gruyter
Edition: Reprint 2022
Audience: College/higher education;
Pages
- Main content: 598
Illustrations
- Other: With 470 Figures and 44 Tables

eBook

Published: August 1, 2022
ISBN: 9783112611203

Hardcover

Published: January 14, 1989
ISBN: 9783112611197